RESONANT RAMAN-SCATTERING OF IN+-IMPLANTED CDTE AND CD0.23HG0.77TE

被引：27

作者：

LUSSON, A

WAGNER, J

RAMSTEINER, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 18期

关键词：

D O I：

10.1063/1.101295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1787 / 1789

页数：3

共 9 条

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[2]

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UZAN, C ;

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RICHTER, V .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :744-748

[7] ELLIPSOMETRIC STUDIES OF ELECTRONIC INTERBAND-TRANSITIONS IN CDXHG1-XTE [J].

VINA, L ;

UMBACH, C ;

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PHYSICAL REVIEW B, 1984, 29 (12) :6752-6760

[8] RAMAN-STUDY OF SI+-IMPLANTED GAAS [J].

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JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :808-814

[9] DAMAGE ASSESSMENT IN LOW-DOSE SI-IMPLANTED GAAS BY RAMAN-SPECTROSCOPY [J].

WAGNER, J .

APPLIED PHYSICS LETTERS, 1988, 52 (14) :1158-1160

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