RAMAN-STUDY OF SI+-IMPLANTED GAAS

被引：27

作者：

WAGNER, J

FRITZSCHE, CR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：808 / 814

页数：7

共 29 条

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[7]

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