ENERGY-DEPENDENCE OF THE SPUTTERING YIELD OF SILICON BOMBARDED WITH NEON, ARGON, KRYPTON, AND XENON IONS

被引:165
作者
ZALM, PC
机构
关键词
D O I
10.1063/1.332340
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2660 / 2666
页数:7
相关论文
共 25 条
[1]  
Andersen H. H., 1981, Sputtering by particle bombardment I. Physical sputtering of single-element solids, P145
[2]   ENERGY AND FLUENCE DEPENDENCE OF THE SPUTTERING YIELD OF SILICON BOMBARDED WITH ARGON AND XENON [J].
BLANK, P ;
WITTMAACK, K .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1519-1528
[3]   AN ANALYTICAL FORMULA AND IMPORTANT PARAMETERS FOR LOW-ENERGY ION SPUTTERING [J].
BOHDANSKY, J ;
ROTH, J ;
BAY, HL .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2861-2865
[4]   ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J].
COBURN, JW ;
WINTERS, HF ;
CHUANG, TJ .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3532-3540
[5]   ENERGY-DEPENDENCE OF AMORPHIZING IMPLANT DOSE IN SILICON [J].
DENNIS, JR ;
HALE, EB .
APPLIED PHYSICS LETTERS, 1976, 29 (09) :523-524
[6]  
HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554
[7]   SPUTTERING OF SI WITH KEV AR+ IONS .1. MEASUREMENT AND MONTE-CARLO CALCULATIONS OF SPUTTERING YIELD [J].
KANG, ST ;
SHIMIZU, R ;
OKUTANI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) :1717-1725
[8]   SPUTTERING OF AMORPHOUS SILICON FILMS BY 0.5 TO 5-KEV AR+ IONS [J].
KIRSCHNER, J ;
ETZKORN, HW .
APPLIED SURFACE SCIENCE, 1979, 3 (02) :251-271
[9]   SPUTTERING YIELDS OF METALS FOR AR+ AND NE+ IONS WITH ENERGIES FROM 50 TO 600 EV [J].
LAEGREID, N ;
WEHNER, GK .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (03) :365-&
[10]   A SEMI-EMPIRICAL FORMULA FOR THE ENERGY-DEPENDENCE OF THE SPUTTERING YIELD [J].
MATSUNAMI, N ;
YAMAMURA, Y ;
ITIKAWA, Y ;
ITOH, N ;
KAZUMATA, Y ;
MIYAGAWA, S ;
MORITA, K ;
SHIMIZU, R .
RADIATION EFFECTS LETTERS, 1980, 57 (1-2) :15-21