X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE SURFACE-CHEMISTRY OF FREON-OXYGEN PLASMA ETCHED SILICON

被引：29

作者：

THOMAS, JH

MAA, JS

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.94528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：859 / 861

页数：3

共 18 条

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[2] COBURN JW, 1982, PLASMA ETCHING REACT
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[J]. JOURNAL OF SOLID STATE CHEMISTRY, 1976, 17 (04) : 447 - 449
[4] Fadley C. S., 1976, Progress in Solid State Chemistry, V11, P265, DOI 10.1016/0079-6786(76)90013-3
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[6] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1443 - 1453
[7] STUDY OF OPTICAL EMISSION FROM AN RF PLASMA DURING SEMICONDUCTOR ETCHING
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NORTON, P
[J]. APPLIED SPECTROSCOPY, 1977, 31 (03) : 201 - 207
[8] PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY
HILL, JM
ROYCE, DG
FADLEY, CS
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GRUNTHANER, FJ
[J]. CHEMICAL PHYSICS LETTERS, 1976, 44 (02) : 225 - 231
[9] METAL-CONTAINING FLUOROPOLYMER FILMS PRODUCED BY SIMULTANEOUS PLASMA-ETCHING AND POLYMERIZATION - EFFECTS OF HYDROGEN OR OXYGEN
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DILKS, A
SEYBOLD, D
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5678 - 5687
[10] DRY CLEANING OF SI SURFACE CONTAMINATION BY REACTIVE SPUTTER ETCHING
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KASAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03): : 529 - 533

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