AN INTERCHANGEABLE SILICON PRESSURE SENSOR WITH ON-CHIP COMPENSATION CIRCUITRY

被引：9

作者：

KOPYSTYNSKI, P

OBERMEIER, E

机构：

[1] Fraunhofer-Inst fuer, Festkoerpertechnologie, Germany

来源：

SENSORS AND ACTUATORS | 1989年 / 18卷 / 3-4期

关键词：

D O I：

10.1016/0250-6874(89)87031-3

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：239 / 245

页数：7

共 8 条

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CLARK, SK ;

WISE, KD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1887-1896

[3]

EHRLER G, 1985, P SENSOR 85 KARLSRUH

[4] TEMPERATURE SENSITIVITY IN SILICON PIEZORESISTIVE PRESSURE TRANSDUCERS [J].

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WISE, KD .

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[5]

OBERMEIER E, 1986, CHARACTERISTICS POLY

[6] INTEGRATED PIEZORESISTIVE PRESSURE SENSOR WITH BOTH VOLTAGE AND FREQUENCY OUTPUT [J].

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SENSORS AND ACTUATORS, 1983, 4 (01) :113-120

[7] MOS INTEGRATED SILICON PRESSURE SENSOR [J].

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ISHIHARA, T ;

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SUZUKI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) :1191-1195

[8] PIEZORESISTIVE PROPERTIES OF SILICON DIFFUSED LAYERS [J].

TUFTE, ON ;

STELZER, EL .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :313-&

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