VALIDITY OF THE BROKEN-BOND MODEL FOR THE DX CENTER IN GAAS

被引：18

作者：

SAITO, M ^{[1
]}

OSHIYAMA, A ^{[1
]}

SUGINO, O ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.45.13745

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The validity of the broken-bond model for the DX center is examined by performing supercell calculations within the local-density approximation for column-IV donors in GaAs. We confirm that the broken-bond geometry is the most stable among the atomic structures accompanied with large lattice relaxation. The calculated bond length between the dopant and the As atoms and frequency of the local vibrational mode (LVM) in the broken-bond geometry agree with extended-x-ray absorption-fine-structure and Fourier-transform-infrared-absorption measurements, respectively, supporting the broken-bond model for the DX center. Furthermore we predict from the present calculation that there exists another infrared light active LVM with 274 cm-1 in the broken-bond geometry. Detection of this mode would be clear evidence for the broken-bond model of the DX center.

引用

页码：13745 / 13748

页数：4

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