INFLUENCE OF OXYGEN ON THE THRESHOLD CURRENT OF ALGAAS MULTIPLE-QUANTUM-WELL LASERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：18

作者：

MIHASHI, Y

MIYASHITA, M

KANENO, N

TSUGAMI, M

FUJII, N

TAKAMIYA, S

MITSUI, S

机构：

[1] Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo, 664, 4-1, Mizuhara

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 141卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90087-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of oxygen incorporation into the epitaxial layers on the threshold current density of AlGaAs multiple quantum well (MQW) lasers grown by metalorganic chemical vapor deposition (MOCVD) is studied quantitatively. It is shown that reduction of the oxygen concentration under 1 x 10(17) cm-3 in the cladding layers is necessary to obtain low threshold current density for the MQW lasers emitting at 780 nm. The effective carrier lifetime measurement in the active layer by time-resolved photoluminescence (PL) spectroscopy is a simple and effective method to monitor the oxygen contamination in the epitaxial layers.

引用

页码：22 / 28

页数：7

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