ANALYSIS OF DLTS METHOD USING A LOCK-IN AMPLIFIER MEASURING 2ND HARMONIC OF THE CAPACITANCE SIGNAL

被引:4
作者
LEBLOA, A [1 ]
FAVENNEC, PN [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN,GROUPEMENT ICM TOH,F-22301 LANNION,FRANCE
来源
REVUE DE PHYSIQUE APPLIQUEE | 1982年 / 17卷 / 11期
关键词
D O I
10.1051/rphysap:019820017011075900
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:759 / 767
页数:9
相关论文
共 13 条
[1]   X-Y PLOTTER CAPACITANCE METER INTERFACE FOR DEEP LEVEL SPECTROSCOPY [J].
BALLAND, B ;
MARCHAND, JJ ;
BRIOT, R ;
GRANGE, G .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (03) :367-372
[2]   TRANSIENT DISTORTION AND NTH ORDER FILTERING IN DEEP LEVEL TRANSIENT SPECTROSCOPY (DNLTS) [J].
CROWELL, CR ;
ALIPANAHI, S .
SOLID-STATE ELECTRONICS, 1981, 24 (01) :25-36
[3]   DEEP-LEVEL-TRANSIENT SPECTROSCOPY - SYSTEM EFFECTS AND DATA-ANALYSIS [J].
DAY, DS ;
TSAI, MY ;
STREETMAN, BG ;
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5093-5098
[4]  
GULBERG, 1977, J PHYS E, V10, P1016
[5]   A SENSITIVE AND INEXPENSIVE SIGNAL ANALYZER FOR DEEP LEVEL STUDIES [J].
JANSSON, L ;
KUMAR, V ;
LEDEBO, LA ;
NIDEBORN, K .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (04) :464-467
[6]  
JOHNSON NM, 1978, PHYSICS SIO2 ITS INT, P421
[7]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[8]   DLTS METHOD USING A SINGLE TEMPERATURE SCANNING [J].
LEBLOA, A ;
FAVENNEC, PN ;
COLIN, Y .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01) :85-93
[9]   ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].
MARTIN, GM ;
MITONNEAU, A ;
MIRCEA, A .
ELECTRONICS LETTERS, 1977, 13 (07) :191-193
[10]   CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS [J].
MILLER, GL ;
RAMIREZ, JV ;
ROBINSON, DAH .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2638-2644