ELIMINATION OF SECONDARY DEFECTS IN AS-IMPLANTED SI BY HIGH-CONCENTRATION OXYGEN-ATOMS

被引：12

作者：

TAMURA, M ^{[1
]}

HORIUCHI, M ^{[1
]}

ITO, T ^{[1
]}

ABE, T ^{[1
]}

机构：

[1] SHIN ETSU HANDOTAI CO LTD,CTR R&D,ANNAKA,GUNMA,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 15期

关键词：

D O I：

10.1063/1.99160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1210 / 1212

页数：3

共 11 条

[1] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J].

CASS, TR ;

REDDI, VGK .

APPLIED PHYSICS LETTERS, 1973, 23 (05) :268-270

[2] SEGREGATION AND DRIFT OF ARSENIC IN SIO2 UNDER THE INFLUENCE OF A TEMPERATURE-GRADIENT [J].

CELLER, GK ;

TRIMBLE, LE ;

WEST, KW ;

PFEIFFER, L ;

SHENG, TT .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :664-666

[3] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J].

CHU, WK ;

MULLER, H ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :297-299

[4] DEPTH DISTRIBUTION OF KNOCK-ON NITROGEN IN SI BY PHOSPHORUS IMPLANTATION THROUGH SI3N4 FILMS [J].

HIRAO, T ;

INOUE, K ;

TAKAYANAGI, S ;

YAEGASHI, Y .

APPLIED PHYSICS LETTERS, 1977, 31 (08) :505-508

[5] DISLOCATION REACTIONS IN ARSENIC-IMPLANTED AND ANNEALED SILICON [J].

MADER, S ;

MICHEL, AE .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (02) :793-805

[6]

MIYAMOTO N, 1974, J JPN SOC APPL PHY S, V43, P408

[7] RESIDUAL DEFECTS IN SI PRODUCED BY RECOIL IMPLANTATION OF OXYGEN [J].

MOLINE, RA ;

CULLIS, AG .

APPLIED PHYSICS LETTERS, 1975, 26 (10) :551-553

[8] THE EFFECT OF RECOILED OXYGEN ON DAMAGE REGROWTH AND ELECTRICAL-PROPERTIES OF THROUGH-OXIDE IMPLANTED SI [J].

SADANA, DK ;

WU, NR ;

WASHBURN, J ;

CURRENT, M ;

MORGAN, A ;

REED, D ;

MAENPAA, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :743-750

[9]

TAMURA M, 1977, SEMICONDUCTOR SILICO, P726

[10]

TAMURA M, 1977, 5TH P INT C ION IMPL, P391

← 1 2 →