A COMPARATIVE-STUDY OF MEV AND MEDIUM-ENERGY ION-IMPLANTATION INTO III-V COMPOUNDS

Room-temperature damaging in GaAs, GaP, InAs, InP and Ge has been investigated as a function of the ion fluence for implantation of various ion species in the energy range from 200 keV to 10 MeV. The depth distributions of the remaining defect density determined by means of RBS/channeling measurements were compared with distributions of the primarily produced vacancies and the energy deposited into electronic processes which were calculated by means of TRIM 87. In GaAs the number of defects remaining after implantation per primarily produced vacancy exhibits a unique dependence on the total energy density deposited into electronic processes for various ion species, ion energies and depth regions. The higher the total energy density deposited into electronic processes the smaller is the number of defects produced per vacancy. Such a behaviour, which can be expected for InAs too, but is not observed in the phosphides, is the reason for the differences in room temperature damaging of phosphides and arsenides on the one hand and for the ion energy dependence of the damage production in the arsenides on the other.