PROPERTIES OF SILICON-METAL CONTACTS VERSUS METAL WORK-FUNCTION, SILICON IMPURITY CONCENTRATION AND BIAS VOLTAGE

被引：17

作者：

PELLEGRINI, B ^{[1
]}

机构：

[1] UNIV PISA,CNR,CTR STUDIO METODI & DISPOSITIVI RADIOTRASMISSIONE,VIA DIOTISALVI 2,56100 PISA,ITALY

来源：

关键词：

D O I：

10.1088/0022-3727/9/1/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：55 / 68

页数：14

共 20 条

[11] DETAILED ANALYSIS OF METAL-SEMICONDUCTOR CONTACT
PELLEGRINI, B
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (03) : 217 - 237
[12] MODEL OF OHMIC CONTACTS TO SEMICONDUCTORS
PELLEGRINI, B
SALARDI, G
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 791 - 798
[13] CURRENT-VOLTAGE CHARACTERISTICS OF SILICON METALLIC-SILICIDE INTERFACES
PELLEGRINI, B
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (05) : 417 - 426
[14] NEW QUANTUM AND ELECTRONIC THEORY OF METAL-SEMICONDUCTOR CONTACTS
PELLEGRINI, B
[J]. PHYSICAL REVIEW B, 1973, 7 (12) : 5299 - 5312
[15] RIVIERE CR, 1957, P PHYS SOC B, V70, P676
[16] On the surface states associated with a periodic potential
Shockley, W
[J]. PHYSICAL REVIEW, 1939, 56 (04): : 317 - 323
[17] SMITHELLS CJ, 1962, METALS REFERENCE BOO, P695
[18] SOSHEA RW, 1965, PHYS REV, V138, P1182
[19] CONTACTS BETWEEN SIMPLE METALS AND ATOMICALLY CLEAN SILICON
THANAILAKIS, A
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (05): : 655 - 668
[20] WOLF HF, 1971, SEMICONDUCTORS, P33