EFFECTS OF MELT COMPOSITION ON DEEP ELECTRONIC STATES AND COMPENSATION RATIOS IN N-TYPE LEC GALLIUM-ARSENIDE

被引：10

作者：

FORNARI, R

GOMBIA, E

MOSCA, R

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 02期

关键词：

D O I：

10.1007/BF02657401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：151 / 155

页数：5

共 36 条

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