HOLE CAPTURE AT ACCEPTORS IN P-TYPE GERMANIUM

被引:5
作者
DARKEN, LS [1 ]
SANGSINGKEOW, P [1 ]
JELLISON, GE [1 ]
机构
[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831
关键词
Germanium; hole capture; recombination;
D O I
10.1007/BF02655557
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Hole capture data obtained by capacitance transient spectroscopy on eleven different acceptors in high-purity germanium are presented over the temperature range 8-160 K. Capture invariably proceeded faster than predicted by the cascade theory and did not follow the Z 3 T -3 dependence predicted by cascade theory, where Z is the acceptor charge and T is the temperature. Instead it was found that capture followed the phenomenological relationship {Mathematical expression} where N υ is the effective density of states at the valence band edge, g is the degeneracy of the ground state (four), p is the hole concentration, τ c is the mean capture time for the acceptor, k is Boltzman's constant, and h is Planck's constant. η is a dimensionless efficiency factor and exp (-E α /kT) is an activation term required to fit the data of some centers. The authors propose that transitions to the electronic ground state from band states or from bound excited states must be faster than previously considered. © 1990 AIME.
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页码:105 / 110
页数:6
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