HOT-ELECTRON-INDUCED PUNCHTHROUGH (HEIP) EFFECT IN SUBMICROMETER PMOSFETS

被引：93

作者：

KOYANAGI, M

LEWIS, AG

MARTIN, RA

HUANG, TY

CHEN, JY

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期

关键词：

D O I：

10.1109/T-ED.1987.23004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：839 / 844

页数：6

共 14 条

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