NANOSTRUCTURE FABRICATION IN METALS, INSULATORS, AND SEMICONDUCTORS USING SELF-DEVELOPING METAL INORGANIC RESIST

AlF//3 evaporated thin films of 20-80 nm thickness have been used as self-developing positive resists and also as negative resists forming metallic Al structures. The exposure mechanism of AlF//3 resist has been investigated, and nanometer scale features have been fabricated in both cases at exposure doses of about 20 C/cm**2 and 2 C/cm**2 at 100 keV, respectively. Using reactive ion etching, AlF//3 resist patterns have been transferred into Si//3N//4, resulting in feature sizes as small as 20 nm.