PARTIAL AGGLOMERATION DURING CO SILICIDE FILM FORMATION

被引：25

作者：

XIAO, ZG ^{[1
]}

ROZGONYI, GA ^{[1
]}

CANOVAI, CA ^{[1
]}

OSBURN, CM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF MATERIALS RESEARCH | 1992年 / 7卷 / 02期

关键词：

D O I：

10.1557/JMR.1992.0269

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The agglomeration of Co silicide films formed on Si substrates processed with evaporated Co film thicknesses from 9 to 28 nm was investigated by TEM and four-point-probe resistivity measurements. It was found that the upper portion of a reacting Co or Co silicide film can agglomerate independently from the main body of the silicide layer. This phenomenon is designated partial agglomeration in contrast to whole film agglomeration which generally occurs at higher temperatures. Partial agglomeration appears to develop more extensively for thinner films and poses a serious limitation for the application of thin silicide contact layers for advanced VLSI devices. The formation mechanism of partial agglomeration and the reason for its variation with film thickness are explained on the basis of a previously presented [MRS Proc. Vol. 202 , p. 101 (1991)] theoretical model of grain boundary grooving and the onset of islanding in silicide films. Kirkendall voids and phase transformation induced volume changes play an important role in the process.

引用

页码：269 / 272

页数：4

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