OPTICALLY-GATED INP-MISFET - A NEW HIGH-GAIN OPTICAL-DETECTOR

被引：15

作者：

YAMAGUCHI, E

KOBAYASHI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1143/JJAP.21.104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：104 / 108

页数：5

共 11 条

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[8] IMPROVED INTERFACE IN INVERSION-TYPE INP-MISFET BY VAPOR ETCHING TECHNIQUE [J].

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