ABSOLUTE THERMAL-EXPANSION MEASUREMENTS OF SINGLE-CRYSTAL SILICON IN THE RANGE 300-1300-K WITH AN INTERFEROMETRIC DILATOMETER

被引：65

作者：

OKAJI, M

机构：

来源：

INTERNATIONAL JOURNAL OF THERMOPHYSICS | 1988年 / 9卷 / 06期

关键词：

D O I：

10.1007/BF01133277

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

引用

页码：1101 / 1109

页数：9

共 10 条

[1]

BENNETT SJ, 1981, 8TH P INT THERM EXP, P235

[2] THERMAL EXPANSION OF COPPER FROM 20 TO 800 K - STANDARD REFERENCE MATERIAL 736 [J].

HAHN, TA .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) :5096-&

[3] THERMAL EXPANSION OF SILICON AND ZINE OXIDE (I) [J].

IBACH, H .

PHYSICA STATUS SOLIDI, 1969, 31 (02) :625-+

[4] LINEAR THERMAL-EXPANSION MEASUREMENTS ON SILICON FROM 6 TO 340 K [J].

LYON, KG ;

SALINGER, GL ;

SWENSON, CA ;

WHITE, GK .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :865-868

[5] PRECISE DETERMINATION OF LATTICE-PARAMETER AND THERMAL-EXPANSION COEFFICIENT OF SILICON BETWEEN 300-K AND 1500-K [J].

OKADA, Y ;

TOKUMARU, Y .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :314-320

[6] A PRACTICAL MEASUREMENT SYSTEM FOR THE ACCURATE DETERMINATION OF LINEAR THERMAL-EXPANSION COEFFICIENTS [J].

OKAJI, M ;

IMAI, H .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1984, 17 (08) :669-673

[7] A HIGH-TEMPERATURE DILATOMETER USING OPTICAL HETERODYNE INTERFEROMETRY [J].

OKAJI, M ;

IMAI, H .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1987, 20 (07) :887-891

[8] THERMAL-EXPANSION REFERENCE DATA - SILICON 300-850-K [J].

ROBERTS, RB .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (10) :L163-L166

[9] THERMAL-EXPANSION OF REFERENCE MATERIALS - COPPER, SILICA AND SILICON [J].

WHITE, GK .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (17) :2070-2078

[10]

1977, THERMOPHYSICAL PROPE, V13, P154

← 1 →