FORMATION OF NITROGEN-OXYGEN DONORS IN N-DOPED CZOCHRALSKI-SILICON CRYSTAL

被引：27

作者：

CHEN, CS

LI, CF

YE, HJ

SHEN, SC

YANG, DR

机构：

[1] NATL LAB INFRARED PHYS,SHANGHAI,PEOPLES R CHINA

[2] ZHEJIANG UNIV,NATL LAB HIGH PUR SILICON & SILANE,ZHEJIANG,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.357458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The behavior of nitrogen and the formation of nitrogen-oxygen donors in nitrogen-doped Czochralski-silicon crystals (Ct-Si) were studied by the electrical and infrared-absorption measurements in samples annealed in different conditions. Experiments showed that nitrogen-oxygen shallow donors are formed during the nitrogen-doped Ct-Si crystal growth. Nitrogen-oxygen thermal donors are generated in temperature range of 300-550 degrees C, and the behavior of these thermal donors resembles that of the thermal donors in Ct-Si crystals [P. Wagner, C. Helm, and E. Stirtl, Festkoperprobleme 24, 191 (1984)], but they are monovalent donors with the same levels as those of neutral thermal donors; no new electrically active center is generated in the temperature range of 600-900 degrees C.

引用

页码：3347 / 3350

页数：4

共 8 条

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