PHOTOLUMINESCENCE STUDY OF NITROGEN-OXYGEN DONORS IN SILICON

被引：19

作者：

STEELE, AG

LENCHYSHYN, LC

THEWALT, MLW

机构：

[1] Department of Physics, Simon Fraser University, Burnaby

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.103059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The series of nitrogen-oxygen donors recently observed in infrared absorption has been studied for the first time using photoluminescence spectroscopy. These complexes are found to bind excitons and multiexcitonic complexes, with an exciton localization energy of 3.9 meV. Conclusive identification of the exciton binding centers with the nitrogen-oxygen donors is provided by the observation of bound-exciton two-electron transitions which leave the donors in their 2s or 2p± excited states.

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页码：148 / 150

页数：3

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