THE DEFECT LUMINESCENCE SPECTRUM AT 0.9351 EV IN CARBON-DOPED HEAT-TREATED OR IRRADIATED SILICON

被引：31

作者：

IRION, E

BURGER, N

THONKE, K

SAUER, R

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 26期

关键词：

D O I：

10.1088/0022-3719/18/26/018

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5069 / 5082

页数：14

共 16 条

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