CARBON ENHANCEMENT EFFECT ON OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON

被引：80

作者：

SHIMURA, F

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 09期

关键词：

D O I：

10.1063/1.336907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3251 / 3254

页数：4

共 22 条

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