OXIDATION OF INXGA1-XASYP1-Y BY NO2 STUDIED WITH AUGER-ELECTRON SPECTROSCOPY

被引：10

作者：

BAHR, CC ^{[1
]}

PAPARAZZO, E ^{[1
]}

MORETTO, L ^{[1
]}

LAMA, F ^{[1
]}

ZEMA, N ^{[1
]}

机构：

[1] CNR,IST STRUTTURA MAT,I-00044 FRASCATI,ITALY

来源：

SURFACE SCIENCE | 1994年 / 316卷 / 03期

关键词：

D O I：

10.1016/0039-6028(94)91217-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the oxidation of quaternary InGaAsP materials by NO2, using Auger electron spectroscopy for both elemental and chemical analysis of the surface. We report that NO2 induces a preferential oxidation, forming oxides of Ga, In, and P. The As remains unoxidized. From Ar+ ion milling we find that the oxide layers are fairly thin (less than 10 Angstrom), even at high exposures (greater than 1000 L) of NO2, where we obtain a saturation coverage of approximately 0.3 ML (monolayers). We have also measured electron energy loss spectra (EELS) and observe the disappearance of the surface plasmon loss feature upon oxide formation.

引用

页码：247 / 256

页数：10

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