ION-BEAM ETCHING OF INGAAS, INP, GAAS, SI, AND GE

被引：20

作者：

CHEN, WX

WALPITA, LM

SUN, CC

CHANG, WSC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.583600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：701 / 705

页数：5

共 16 条

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[2]

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[8] ION-BEAM MILLING OF INP WITH AN AR/O2-GAS MIXTURE [J].

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[9]

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[10] REACTIVE ION-BEAM ETCHING WITH CF4 - CHARACTERIZATION OF A KAUFMAN ION-SOURCE AND DETAILS OF SIO2 ETCHING [J].

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