COMBINED RAMAN AND LUMINESCENCE ASSESSMENT OF EPITAXIAL 6H-SIC FILMS GROWN ON 6H-SIC BY LOW-PRESSURE VERTICAL CHEMICAL-VAPOR-DEPOSITION

被引：3

作者：

FENG, ZC

TIN, CC

HU, R

YUE, KT

机构：

[1] EMORY UNIV,DEPT PHYS,ATLANTA,GA 30322

[2] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36849

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 10期

关键词：

D O I：

10.1088/0268-1242/10/10/018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Raman scattering and photoluminescence (PL) under near-UV excitations were used to assess the 6H-SiC films epitaxied on 6H-SiC by low pressure vertical chemical vapour deposition (LPV-CVD). Raman linewidths and relative intensities with respect to the PL emissions were used to characterize the quality of the 6H-SiC films. Ti-related PL and outgoing resonance Raman scattering were studied. Samples grown by LPV-CVD with different growth parameters were compared on the basis of their Raman-PL spectra. This study showed that a combination of Raman and PL measurements can be used as a convenient method to assess the 6H-SiC/6H-SiC homoepitaxial structures.

引用

页码：1418 / 1422

页数：5

共 34 条

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