ROOM-TEMPERATURE OPERATION OF AN INGAASP DOUBLE-HETEROSTRUCTURE LASER EMITTING AT 1.55-MU-M ON A SI SUBSTRATE

被引：60

作者：

SUGO, M

MORI, H

TACHIKAWA, M

ITOH, Y

YAMAMOTO, M

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.103608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room-temperature operations of an InGaAsP double-heterostructure (DH) laser emitting at 1.55 μm on a Si substrate is reported. A pulsed threshold current as low as 46 mA has been measured for a ridge waveguide laser with a 4 μm strip width and a 200 μm cavity length. This successful laser operation is due to the high crystalline quality of the DH structure with full width at half maximum of x-ray rocking curves as low as 110 arcsec grown on a Si substrate by the organometallic vapor phase epitaxy/vapor mixing epitaxy hybrid method. A correlation between the optical property of an InGaAsP DH and its crystalline quality is also discussed.

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页码：593 / 595

页数：3

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