DARK CONDUCTIVITY IN AMORPHOUS UNDOPED SILICON FILMS

被引：11

作者：

AUGELLI, V ^{[1
]}

MURRI, R ^{[1
]}

机构：

[1] CNR,NAZL STRUTTURA MAT GRP,I-70126 BARI,ITALY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 57卷 / 02期

关键词：

D O I：

10.1016/0022-3093(83)90056-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：225 / 240

页数：16

共 43 条

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[3] PHOTOCONDUCTIVITY IN AMORPHOUS SI-H-CL FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 248 - 251
[4] OPTICAL AND ELECTRICAL-PROPERTIES OF GLOW-DISCHARGE SILICON FILMS
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[J]. THIN SOLID FILMS, 1982, 90 (02) : 153 - 159
[5] OPTICAL-CONSTANTS OF SILICON FILMS DEPOSITED BY THE R.F. GLOW-DISCHARGE OF SICL4
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[J]. THIN SOLID FILMS, 1981, 86 (04) : 359 - 367
[6] TRANSPORT IN LITHIUM-DOPED AMORPHOUS SILICON
BEYER, W
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OVERHOF, H
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (03): : 205 - 217
[7] RF PLASMA DEPOSITION OF AMORPHOUS-SILICON FILMS FROM SICL4-H2
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[J]. THIN SOLID FILMS, 1980, 67 (01) : 103 - 107
[8] BRUNO G, 1981, PLASMA PROCESSING, P26
[9] BRUNO G, THIN SOLID FILMS
[10] CONDUCTION PROCESSES AND THRESHOLD SWITCHING IN AMORPHOUS SI FILMS
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FONG, WTJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 240 - 243

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