DEFECT PROFILING OF SEMICONDUCTOR EPILAYERS USING POSITRON BEAMS

被引:21
作者
TANDBERG, E
SCHULTZ, PJ
AERS, GC
JACKMAN, TE
机构
[1] UNIV WESTERN ONTARIO,CTR CHEM PHYS,LONDON N6A 3K7,ONTARIO,CANADA
[2] NATL RES COUNCIL CANADA,MICROSTRUCT SCI LAB,OTTAWA K1A 0R6,ONTARIO,CANADA
关键词
D O I
10.1139/p89-048
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:275 / 282
页数:8
相关论文
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