ELECTRON-MICROSCOPE OBSERVATION OF AU/SI (111) INTERFACE IN ATOMIC LEVEL

被引:9
作者
YOKOTA, Y
HASHIMOTO, H
SAITO, N
ENDOH, H
机构
[1] OKAYAMA UNIV SCI,OKAYAMA 700,JAPAN
[2] OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 03期
关键词
GOLD AND ALLOYS - Thin Films - MICROSCOPES; ELECTRON; -; Applications;
D O I
10.1143/JJAP.25.L168
中图分类号
O59 [应用物理学];
学科分类号
摘要
Au/Si (111) interfaces were investigated by a high resolution electron microscope in both 'cross-sectional' and 'flat-on' modes. The epitaxially grown Au (111) films of 10-20 nm thick on Si (111) show a mosaic structure of about 100 nm in diameter making small angle grain boundaries. By the flat-on observation, a fringe contrast of 0. 28 nm spacing are observed in the boundary. The cross-sectional observations reveal that the interface is flat and the intermixing layers are formed along the surface in Si side. A long periodicity contrast anomaly was often observed in the intermixing layer images.
引用
收藏
页码:L168 / L170
页数:3
相关论文
共 9 条
[1]   ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].
CHERNS, D ;
ANSTIS, GR ;
HUTCHISON, JL ;
SPENCE, JCH .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862
[2]   A PHOTOEMISSION INVESTIGATION OF THE SI-AU INTERFACE AND ITS BEHAVIOR UNDER OXYGEN EXPOSURE [J].
DERRIEN, J ;
RINGEISEN, F .
SURFACE SCIENCE, 1983, 124 (2-3) :L35-L40
[3]  
FOLL F, 1981, J APPL PHYS, V52, P250, DOI 10.1063/1.328440
[4]   THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM [J].
GIBSON, JM ;
BEAN, JC ;
POATE, JM ;
TUNG, RT .
THIN SOLID FILMS, 1982, 93 (1-2) :99-108
[6]   AES STUDY OF VERY 1ST STAGES OF CONDENSATION OF GOLD-FILMS ON SILICON(111) SURFACES [J].
LELAY, G ;
FAURIE, JP .
SURFACE SCIENCE, 1977, 69 (01) :295-300
[7]   PRESENCE OF CRITICAL AU-FILM THICKNESS FOR ROOM-TEMPERATURE INTERFACIAL REACTION BETWEEN AU(FILM) AND SI(CRYSTAL SUBSTRATE) [J].
OKUNO, K ;
ITO, T ;
IWAMI, M ;
HIRAKI, A .
SOLID STATE COMMUNICATIONS, 1980, 34 (06) :493-497
[8]   LEED-AES STUDY OF THE AU-SI(100) SYSTEM [J].
OURA, K ;
HANAWA, T .
SURFACE SCIENCE, 1979, 82 (01) :202-214
[9]   CRYSTAL-STRUCTURE OF A NONEQUILIBRIUM PHASE IN GOLD-SILICON SYSTEM [J].
SURYANARAYANA, C ;
ANANTHARAMAN, TR .
MATERIALS SCIENCE AND ENGINEERING, 1974, 13 (02) :73-81