2 PSEUDOBINARY SEMICONDUCTING SILICIDES - REXMO1-XSI2 AND CRXV1-XSI2

被引：10

作者：

LONG, RG

MAHAN, JE

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 17期

关键词：

D O I：

10.1063/1.103132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two groups of thin-film samples were grown on silicon wafer substrates of compositions spanning the entire range of the ternary disilicides: Re xMo1-xSi2 and CrxV 1-xSi2. In each case, the lattice parameters vary smoothly with composition. The optical and electrical properties of the films suggest that when molybdenum is added to semiconducting ReSi2 and when vanadium is added to semiconducting CrSi2, the forbidden energy gap in each case decreases smoothly to zero.

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页码：1655 / 1657

页数：3

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