SWEEP OUT MEASUREMENTS OF BAND-TAIL CARRIERS IN A-SI-H

被引:30
作者
STREET, RA
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1989年 / 60卷 / 02期
关键词
D O I
10.1080/13642818908211191
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:213 / 236
页数:24
相关论文
共 23 条
[1]  
BIEGELSEN DK, 1980, SOL CELLS, V2, P421, DOI 10.1016/0379-6787(80)90018-6
[2]   SWEEP-OUT EXPERIMENTS - A NEW SPECTROSCOPY FOR THE ELECTRONIC DENSITY OF STATES IN DOPED SEMICONDUCTORS [J].
BRANZ, HM ;
SILVER, M ;
ADLER, D .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (02) :271-282
[3]   THEORY OF SWEEP OUT EXPERIMENTS - A NEW SPECTROSCOPY FOR THE ELECTRONIC DENSITY OF STATES IN DOPED HYDROGENATED AMORPHOUS-SILICON FILMS [J].
BRANZ, HM ;
ADLER, D ;
SILVER, M .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :655-658
[4]   REALISTIC MODELING OF THE ELECTRONIC-PROPERTIES OF DOPED AMORPHOUS-SILICON [J].
HACK, M ;
STREET, RA .
APPLIED PHYSICS LETTERS, 1988, 53 (12) :1083-1085
[5]   For the mechanism of the photoelectric primary current in insulating crystals. [J].
Hecht, Karl .
ZEITSCHRIFT FUR PHYSIK, 1932, 77 (3-4) :235-245
[6]   DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].
JACKSON, WB ;
AMER, NM .
PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562
[8]   MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].
LANG, DV ;
COHEN, JD ;
HARBISON, JP .
PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320
[9]   SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS [J].
ROSE, A .
PHYSICAL REVIEW, 1955, 97 (06) :1538-1544
[10]  
SCHIFF EA, 1988, MATERIALS RES SOC S, V118