INTERFACIAL REACTIONS BETWEEN (HGCD)TE AND INTERMEDIATE REACTIVITY OVERLAYERS

被引：9

作者：

DAVIS, GD ^{[1
]}

BECK, WA ^{[1
]}

KELLY, MK ^{[1
]}

KILDAY, DG ^{[1
]}

MO, YW ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,MADISON,WI 53706

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.575496

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2732 / 2735

页数：4

共 21 条

[1] SURFACE AND BULK STRUCTURAL DEFECTS IN HG1-XCDXTE [J].

COLE, S ;

CAREY, GP ;

SILBERMAN, JA ;

SPICER, WE ;

WILSON, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :206-211

[2]

Davis G. D., 1986, Vuoto Scienza e Tecnologia, V16, P127

[3] DEPOSITION OF THE REACTIVE METALS AL AND IN ONTO SPUTTERED AND CLEAVED HG1-XCDXTE SURFACES [J].

DAVIS, GD ;

BECK, WA ;

NILES, DW ;

COLAVITA, E ;

MARGARITONDO, G .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3150-3156

[4] INTERACTIONS BETWEEN CLEAVED (HG, CD)TE SURFACES AND DEPOSITED OVERLAYERS OF AL AND INDIUM [J].

DAVIS, GD ;

BYER, NE ;

RIEDEL, RA ;

MARGARITONDO, G .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1915-1921

[5] OVERLAYER INTERACTIONS WITH (HGCD)TE [J].

DAVIS, GD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1939-1945

[6] DEPOSITION OF AU OVERLAYERS ONTO CLEAVED (HG,CD)TE SURFACES [J].

DAVIS, GD ;

BECK, WA ;

BYER, NE ;

DANIELS, RR ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :546-550

[7] EFFECT OF SURFACE PREPARATION ON GE OVERLAYER GROWTH ON (HGCD)TE [J].

DAVIS, GD ;

BECK, WA ;

KELLY, MK ;

MO, YW ;

MARGARITONDO, G .

APPLIED PHYSICS LETTERS, 1986, 49 (23) :1611-1613

[8] APPLICATION OF SURFACE BEHAVIOR DIAGRAMS TO THE STUDY OF HYDRATION OF PHOSPHORIC-ACID ANODIZED ALUMINUM [J].

DAVIS, GD ;

SUN, TS ;

AHEARN, JS ;

VENABLES, JD .

JOURNAL OF MATERIALS SCIENCE, 1982, 17 (06) :1807-1818

[9]

DAVIS GD, 1986, SURF INTERFACE ANAL, V9, P421

[10]

DAVIS GD, UNPUB PHYS REV B

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