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SYNCHROTRON RADIATION-ASSISTED REMOVAL OF OXYGEN AND CARBON CONTAMINANTS FROM A SILICON SURFACE

被引：10
作者：
NARA, Y
SUGITA, Y
NAKAYAMA, N
ITO, T
机构：
[1] Fujitsu Laboratories Ltd. Atsugi, Atsugi, 243-01
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期
关键词：
SYNCHROTRON RADIATION; SURFACE CLEANING; CONTAMINANT; PHOTOEXCITED PROCESS; SILICON DIOXIDE; SECONDARY ION MASS SPECTROSCOPY; RAMAN SPECTROSCOPY;
D O I：
10.1143/JJAP.30.L1753
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A silicon dioxide film was etched by synchrotron radiation (SR) irradiation at a substrate temperature of about 500-degrees-C. The obtained etching rate was 13 nm/h and the activation energy approximately 1.2 eV. This process was applied to remove surface contaminants on a silicon surface. Oxygen and carbon contaminants in the SR-irradiated area decreased by about 1/3 and 1/10, respectively, indicating that SR irradiation is effective for surface cleaning. A sharp peak in Raman spectrum appeared when a silicon film was deposited after SR irradiation. Thus, the pre-irradiation by SR improves the crystal quality of the deposited film.
引用
收藏
页码：L1753 / L1755
页数：3
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