TRANSPARENT AND OPAQUE SCHOTTKY CONTACTS ON UNDOPED IN0.52AL0.48AS GROWN BY MOLECULAR-BEAM EPITAXY

被引：31

作者：

GAO, W ^{[1
]}

BERGER, PR ^{[1
]}

HUNSPERGER, RG ^{[1
]}

ZYDZIK, G ^{[1
]}

RHODES, WW ^{[1
]}

OBRYAN, HM ^{[1
]}

SIVCO, D ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 25期

关键词：

D O I：

10.1063/1.113767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3471 / 3473

页数：3

共 27 条

[21] APPLICATION OF INDIUM-TIN-OXIDE WITH IMPROVED TRANSMITTANCE AT 1.3-MU-M FOR MSM PHOTODETECTORS [J].

SEO, JW ;

CANEAU, C ;

BHAT, R ;

ADESIDA, I .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (11) :1313-1315

[22] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES [J].

SPICER, WE ;

LINDAU, I ;

SKEATH, P ;

SU, CY ;

CHYE, P .

PHYSICAL REVIEW LETTERS, 1980, 44 (06) :420-423

[23] UNIFIED DEFECT MODEL AND BEYOND [J].

SPICER, WE ;

LINDAU, I ;

SKEATH, P ;

SU, CY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1019-1027

[24] ENERGY-BAND STRUCTURE OF ALUMINUM ARSENIDE [J].

STUKEL, DJ ;

EUWEMA, RN .

PHYSICAL REVIEW, 1969, 188 (03) :1193-&

[25]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[26] CAPACITANCE TRANSIENT ANALYSIS OF MOLECULAR-BEAM EPITAXIAL ETA-IN0.53GA0.47AS AND ETA-IN0.52AL0.48AS [J].

WHITNEY, PS ;

LEE, W ;

FONSTAD, CG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :796-799

[27] FERMI-LEVEL POSITION AT A SEMICONDUCTOR-METAL INTERFACE [J].

ZUR, A ;

MCGILL, TC ;

SMITH, DL .

PHYSICAL REVIEW B, 1983, 28 (04) :2060-2067

← 1 2 3 →