AN APPROACH TO FABRICATING SUB-1/2-MICROMETER-LENGTH GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：4

作者：

HOLDEMAN, LB

BARBER, RC

ABITA, JL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：956 / 958

页数：3

共 15 条

[1] EVAPORATED FILM PROFILES OVER STEPS IN SUBSTRATES
BLECH, IA
[J]. THIN SOLID FILMS, 1970, 6 (02) : 113 - &
[2] BUTLIN RS, 1978, IEDM, P136
[3] Chao P. C., 1981, International Electron Devices Meeting, P92
[4] SUBMICROMETER SELF-ALIGNED DUAL-GATE GAAS FET
DEAN, RH
MATARESE, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (06) : 358 - 360
[5] OFFSET MASKS FOR LIFT-OFF PHOTOPROCESSING
DOLAN, GJ
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 337 - 339
[6] FRARY JM, 1981, SEMICONDUCTOR IN DEC, P72
[7] MASKING OF DEPOSITED THIN-FILMS BY MEANS OF AN ALUMINUM-PHOTORESIST COMPOSITE
GREBE, K
AMES, I
GINZBERG, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 458 - 460
[8] JACKSON TN, 1979, IEDM TECH DIG, P58
[9] Kamei K., 1980, International Electron Devices Meeting. Technical Digest, P102
[10] LIN BJ, 1983, SOLID STATE TECHNOL, V26, P105