SYNCHROTRON X-RAY TOPOGRAPHIC OBSERVATION OF DEFECT EVOLUTION AT THE SI-SI3N4 INTERFACE

被引：7

作者：

JOURDAN, C ^{[1
]}

GASTALDI, J ^{[1
]}

DERRIEN, J ^{[1
]}

BIENFAIT, M ^{[1
]}

LAYET, JM ^{[1
]}

机构：

[1] FAC SCI LUMINY,DEPT PHYS,F-13288 MARSEILLE 9,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 03期

关键词：

D O I：

10.1063/1.93493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：259 / 261

页数：3

共 14 条

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