METAL-SEMICONDUCTOR INTERFACES

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[2] INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (12) : 895 - 898

[3] CLUSTER FORMATION AND ATOMIC INTERMIXING AT THE REACTIVE V/GE(111) INTERFACE [J]. PHYSICAL REVIEW B, 1985, 32 (08): : 5149 - 5155

[4] DELGIUDICE M, 1986, UNPUB PHYS REV B, V33

[5] CLUSTER-INDUCED REACTIONS AT A METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111) [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (24) : 2331 - 2334

[6] SPECULAR BOUNDARY SCATTERING AND ELECTRICAL TRANSPORT IN SINGLE-CRYSTAL THIN-FILMS OF COSI2 [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (16) : 1840 - 1843

[7] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 151 - 153

[8] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111) [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (19) : 2139 - 2142

[9] Matthews J.W, 1975, EPITAXIAL GROWTH

[10] NARAYANAMURTI V, 1984, PHYSICS TODAY OCT, P24

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[2] INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (12) : 895 - 898

[3] CLUSTER FORMATION AND ATOMIC INTERMIXING AT THE REACTIVE V/GE(111) INTERFACE [J]. PHYSICAL REVIEW B, 1985, 32 (08): : 5149 - 5155

[4] DELGIUDICE M, 1986, UNPUB PHYS REV B, V33

[5] CLUSTER-INDUCED REACTIONS AT A METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111) [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (24) : 2331 - 2334

[6] SPECULAR BOUNDARY SCATTERING AND ELECTRICAL TRANSPORT IN SINGLE-CRYSTAL THIN-FILMS OF COSI2 [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (16) : 1840 - 1843

[7] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 151 - 153

[8] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111) [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (19) : 2139 - 2142

[9] Matthews J.W, 1975, EPITAXIAL GROWTH

[10] NARAYANAMURTI V, 1984, PHYSICS TODAY OCT, P24