OPTICAL PROPERTIES AND ATOMIC STRUCTURE OF CLEAVED SILICON AND GERMANIUM (111) SURFACES

被引：35

作者：

Olmstead, Marjorie A. ^{[1
]}

机构：

[1] Xerox Palo Alto Res Ctr, 3333 Coyote Hill Rd, Palo Alto, CA 94304 USA

来源：

SURFACE SCIENCE REPORTS | 1986年 / 6卷 / 4-5期

关键词：

D O I：

10.1016/0167-5729(87)90003-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The theoretical and experimental results on the cleaved surfaces of silicon and germanium (111) are reviewed. Emphasis is placed on the optical properties of these structures, and how the determination of the optical properties has led to structural information. These and other results show strong support for a structural model involving pi-bonded chains of atoms along the surface.

引用

页码：159 / 252

页数：94

共 192 条

[11] OPTICAL-PROPERTIES OF DANGLING-BOND STATES AT CLEAVED SILICON SURFACES [J].

ASSMANN, J ;

MONCH, W .

SURFACE SCIENCE, 1980, 99 (01) :34-44

[12]

Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397

[13] CLEAVED SI(111) SURFACES - GEOMETRICAL AND ANNEALING BEHAVIOR [J].

AUER, PP ;

MONCH, W .

SURFACE SCIENCE, 1979, 80 (01) :45-55

[14] PERTURBATIVE APPROACH TO THE CALCULATION OF THE ELECTRIC-FIELD NEAR A METAL-SURFACE [J].

BAGCHI, A ;

BARRERA, RG ;

RAJAGOPAL, AK .

PHYSICAL REVIEW B, 1979, 20 (12) :4824-4838

[15]

BAILEY RT, 1983, P SOC PHOTO-OPT INST, V369, P88, DOI 10.1117/12.934351

[16] OPTICAL REFLECTANCE OF NONLOCAL SYSTEMS [J].

BARRERA, RG ;

BAGCHI, A .

PHYSICAL REVIEW B, 1981, 24 (04) :1612-1615

[17] OPTICAL PROPERTIES OF SEMICONDUCTORS .3. INFRA-RED TRANSMISSION OF SILICON [J].

BECKER, M ;

FAN, HY .

PHYSICAL REVIEW, 1949, 76 (10) :1531-1532

[18] NEW RECONSTRUCTIONS ON SILICON (111) SURFACES [J].

BECKER, RS ;

GOLOVCHENKO, JA ;

HIGASHI, GS ;

SWARTZENTRUBER, BS .

PHYSICAL REVIEW LETTERS, 1986, 57 (08) :1020-1023

[19] TUNNELING IMAGES OF ATOMIC STEPS ON THE SI(111)7X7 SURFACE [J].

BECKER, RS ;

GOLOVCHENKO, JA ;

MCRAE, EG ;

SWARTZENTRUBER, BS .

PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2028-2031

[20] ACTIVATION-ENERGY FOR MIGRATION ON SILICON (111) FACE [J].

BEDAIR, SM .

SURFACE SCIENCE, 1974, 42 (02) :595-599

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