CARBON INCORPORATION IN SILICON FOR SUPPRESSING INTERSTITIAL-ENHANCED BORON-DIFFUSION

被引：163

作者：

STOLK, PA

EAGLESHAM, DJ

GOSSMANN, HJ

POATE, JM

机构：

[1] ATandT Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.113204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of substitutional C on interstitial-enhanced B diffusion in Si has been investigated. Substitutional C was incorporated into B doped Si superlattices using molecular-beam-epitaxial growth under a background of acetylene gas. Excess Si self-interstitials were generated by near-surface 5×1013/cm2, 40 keV Si implants and diffused at 790°C. The interstitial-enhanced diffusion of the B marker layers is fully suppressed for C concentrations of 2×1019/cm3, thus demonstrating that substitutional C acts as a trap for interstitials in crystalline Si. Uniform C incorporation of 5×1018/cm2 significantly reduces the transient enhanced diffusion of a typical B junction implant without perturbing its electrical activity.© 1995 American Institute of Physics.

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页码：1370 / 1372

页数：3

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