LITHIUM STABILITY IN HYDROGENATED AMORPHOUS-SILICON

被引：6

作者：

BEYER, W

HERION, J

ZASTROW, U

机构：

[1] Institut für Schicht- und Ionentechnik (ISI-PV), Forschungszentrum Jülich

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80069-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Using secondary ion mass spectroscopy (SIMS), the stability of lithium doping by in-diffusion and ion implantation is studied for doped and undoped a-Si:H films. The results show a higher stability of implanted compared to in-diffused samples attributed to interaction of Li with implantation defects. Furthermore, for highly boron-doped material the in-diffusion is greatly enhanced while the out-diffusion is strongly inhibited. These latter effects are attributed to field enhanced diffusion and ion pairing.

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页码：111 / 114

页数：4

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