NOISE CURRENT SPECTRUM IN SUBMICROMETER SAMPLES

被引：11

作者：

NAG, BR ^{[1
]}

AHMED, SR ^{[1
]}

ROY, MD ^{[1
]}

机构：

[1] JADAVPUR UNIV,CALCUTTA 700032,W BENGAL,INDIA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 41卷 / 03期

关键词：

D O I：

10.1007/BF00616840

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：197 / 199

页数：3

共 13 条

[1]

AWANO Y, 1982, ELECTRON LETT, V18, P135

[2] BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE [J].

EASTMAN, LF ;

STALL, R ;

WOODARD, D ;

DANDEKAR, N ;

WOOD, CEC ;

SHUR, MS ;

BOARD, K .

ELECTRONICS LETTERS, 1980, 16 (13) :524-525

[3] MONTE-CARLO ESTIMATION OF HOT CARRIER NOISE AT MILLIMETER-WAVE AND SUBMILLIMETER-WAVE FREQUENCIES [J].

GRONDIN, RO ;

BLAKEY, PA ;

EAST, JR ;

ROTHMAN, ED .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :914-923

[4]

NAG BR, 1980, SPRINGER SERIES SOLI, V11, P30

[5]

NAG BR, 1984, SEMICONDUCTORS PROBE, V1, P40

[6] IMPORTANCE OF BOUNDARY-CONDITIONS TO CONDUCTION IN SHORT SAMPLES [J].

ROSENBERG, JJ ;

YOFFA, EJ ;

NATHAN, MI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :941-944

[7] NOISE IN NEAR-BALLISTIC N+NN+ AND N+PN+ GALLIUM-ARSENIDE SUB-MICRON DIODES [J].

SCHMIDT, RR ;

BOSMAN, G ;

VANVLIET, CM ;

EASTMAN, LF ;

HOLLIS, M .

SOLID-STATE ELECTRONICS, 1983, 26 (05) :437-444

[8] NEAR BALLISTIC ELECTRON-TRANSPORT IN GAAS DEVICES AT 77-DEGREES-K [J].

SHUR, MS ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1981, 24 (01) :11-18

[9] BALLISTIC TRANSPORT IN A SEMICONDUCTOR WITH COLLISIONS [J].

SHUR, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1120-1130

[10] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].

SHUR, MS ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683

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