ELECTRICAL-PROPERTIES OF SILICON DIOXIDE FILMS FABRICATED AT 700-DEGREES-C .1. PYROLYSIS OF TETRAETHOXYSILANE

被引：14

作者：

VOGEL, RH

BUTLER, SR

FEIGL, FJ

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 03期

关键词：

D O I：

10.1007/BF02661226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：329 / 342

页数：14

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