SIGNATURE OF THE GALLIUM-OXYGEN-GALLIUM DEFECT IN GAAS BY DEEP LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS

被引：48

作者：

NEILD, ST ^{[1
]}

SKOWRONSKI, M ^{[1
]}

LAGOWSKI, J ^{[1
]}

机构：

[1] UNIV S FLORIDA,DEPT ELECT ENGN,TAMPA,FL 33620

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.104513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental results of deep level transient spectroscopy (DLTS) and Fourier transform infrared spectroscopy (FTIR) on oxygen-doped GaAs crystals are presented. A positive identification of the DLTS signature of the Ga-O-Ga defect (tentatively identified as an oxygen-arsenic vacancy complex) is made through correlation with FTIR measurements. The energy level for the two-electron state of the defect is found to be located at 0.55 eV below the conduction band, and direct proof is given that this center is actually a negative U center. A calibration factor for local vibrational mode absorption is calculated to be 8 x 10(16) cm-1.

引用

页码：859 / 861

页数：3

共 13 条

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