VIBRATIONAL-MODES AND INFRARED-ABSORPTION OF INTERSTITIAL OXYGEN IN SILICON

被引：7

作者：

CHEN, CS ^{[1
]}

SCHRODER, DK ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,CTR SOLID STATE ELECTR,TEMPE,AZ 85287

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 42卷 / 04期

关键词：

D O I：

10.1007/BF00616559

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：257 / 262

页数：6

共 16 条

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[6]

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[8]

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[9] STRUCTURE FINE DE LABSORPTION A 9 MU DES GROUPEMENTS SI2O DANS LE SILICIUM A BASSE TEMPERATURE [J].

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[10] QUANTITATIVE SPECTROSCOPY OF INTERSTITIAL OXYGEN IN SILICON [J].

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