RAPID THERMAL ANNEALING OF DOPANTS IMPLANTED INTO PREAMORPHIZED SILICON

被引：32

作者：

SEIDEL, TE

KNOELL, R

POLI, G

SCHWARTZ, B

STEVIE, FA

CHU, P

机构：

[1] AT&T BELL LABS,600 MT AVE,MURRAY HILL,NJ 07974

[2] AT&T BELL LABS,ALLENTOWN,PA 18103

[3] CA EVANS & ASSOC,SAN MATEO,CA 94402

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.336182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：683 / 687

页数：5

共 22 条

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[4]

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[9]

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[10] INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL [J].

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