PROTON-BEAM MODIFICATION OF SELECTED AIIIBV COMPOUNDS

被引:10
作者
ASCHERON, C
机构
[1] Sektion Physik, Universität Leipzig
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 124卷 / 01期
关键词
D O I
10.1002/pssa.2211240102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:11 / 55
页数:45
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共 182 条
[71]   DETERMINATION OF LATTICE STRAIN IN PROTON-BOMBARDED REGIONS OF SINGLE-CRYSTAL GALLIUM-ARSENIDE, USING PRECISION X-RAY MEASUREMENTS [J].
HALLIWELL, MAG ;
HECKINGBOTTOM, R ;
HEMMENT, PLF .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (04) :L29-L31
[72]   FLUX DEPENDENCE OF DAMAGE ACCUMULATION IN SILICON DURING ION-BOMBARDMENT [J].
HOLLDACK, K ;
KERKOW, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 98 (02) :527-534
[73]   NEAR-EDGE OPTICAL-ABSORPTION SPECTRA OF PROTON-IMPLANTED GAAS [J].
HORIG, W ;
ORLENKO, VF ;
NEUMANN, H ;
ASCHERON, C .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 116 (01) :K119-K123
[74]   OPTICAL-PROPERTIES OF HELIUM IMPLANTED INP SINGLE-CRYSTALS [J].
HORIG, W ;
ORLENKO, VF ;
NEUMANN, H ;
ASCHERON, C .
CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (03) :359-362
[75]   CONFIGURATION COORDINATE DIAGRAM FOR THE E4 DEFECT IN ELECTRON-IRRADIATED GAP [J].
HUANG, QS ;
GRIMMEISS, HG ;
SAMUELSON, L .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :3068-3071
[76]  
Huber K. P., 1979, CONSTANTS DIATOMIC M, DOI DOI 10.1007/978-1-4757-0961-2_2
[77]  
IMURA T, 1983, JAPAN ANN REV ELECTR, V8
[78]   EVIDENCE FOR HYDROGEN MOTION IN ANNEALING OF LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].
JACKSON, WB ;
KAKALIOS, J .
PHYSICAL REVIEW B, 1988, 37 (02) :1020-1023
[79]   INFRARED SPECTROSCOPIC EVIDENCE OF SILICON RELATED HYDROGEN COMPLEXES IN HYDROGENATED N-TYPE GAAS DOPED WITH SILICON [J].
JALIL, A ;
CHEVALLIER, J ;
PESANT, JC ;
MOSTEFAOUI, R ;
PAJOT, B ;
MURAWALA, P ;
AZOULAY, R .
APPLIED PHYSICS LETTERS, 1987, 50 (08) :439-441
[80]  
JEAN DY, 1987, PHYS REV B, V36, P1324