MONOLITHIC FABRICATION OF STRAIN-FREE (AL,GA)AS HETEROSTRUCTURE LASERS ON SILICON SUBSTRATES

This letter reports the first strain-free (Al,Ga)As heterostructure lasers fabricated monolithically on silicon substrates. Residual thermal strain, following molecular beam epitaxial growth, was relieved by chemically separating patterned laser device layers from their substrates. Held in their original location the layers readhered, forming a bond sufficiently robust for subsequent device processing. Strain relief is ascertained through analysis of emission polarization of broad-area double-heterostructure lasers.