ROOM-TEMPERATURE CW OPERATION OF ALGAAS/GAAS SQW LASERS ON SI SUBSTRATES BY MOCVD USING ALGAAS/ALGAP INTERMEDIATE LAYERS

被引：11

作者：

EGAWA, T

KOBAYASHI, Y

HAYASHI, Y

SOGA, T

JIMBO, T

UMENO, M

机构：

[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya, 466, Gokiso-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 07期

关键词：

Aigaas/aigap; Cw operation; Gaas/si; Laser; Mocvd; Photoluminescence; Quantum well; Tem;

D O I：

10.1143/JJAP.29.L1133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature CW operation of all-MOCVD-grown Al0.3Ga0.7As/GaAs SQW lasers on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers has been demonstrated for the first time. The averaged threshold current density and differential quantum efficiency of the lasers grown with the Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers are 2.23 kA/cm2 and 50.3%, respectively, which are superior to those of the lasers grown by the two-step growth technique. The characteristics of the lasers using this technique are more uniform than those grown by the two-step growth technique. © 1990 The Japan Society of Applied Physics.

引用

页码：L1133 / L1135

页数：3

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