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SUB-MICRON ELECTRON-TRANSPORT IN GAAS AT 77-K
被引:2
作者
:
NAG, BR
论文数:
0
引用数:
0
h-index:
0
机构:
JADAVPUR UNIV,DEPT PHYS,CALCUTTA 700032,W BENGAL,INDIA
JADAVPUR UNIV,DEPT PHYS,CALCUTTA 700032,W BENGAL,INDIA
NAG, BR
[
1
]
ROY, MD
论文数:
0
引用数:
0
h-index:
0
机构:
JADAVPUR UNIV,DEPT PHYS,CALCUTTA 700032,W BENGAL,INDIA
JADAVPUR UNIV,DEPT PHYS,CALCUTTA 700032,W BENGAL,INDIA
ROY, MD
[
1
]
机构
:
[1]
JADAVPUR UNIV,DEPT PHYS,CALCUTTA 700032,W BENGAL,INDIA
来源
:
INTERNATIONAL JOURNAL OF ELECTRONICS
|
1984年
/ 57卷
/ 04期
关键词
:
D O I
:
10.1080/00207218408938934
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:527 / 533
页数:7
相关论文
共 17 条
[1]
BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE
[J].
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
EASTMAN, LF
;
STALL, R
论文数:
0
引用数:
0
h-index:
0
STALL, R
;
WOODARD, D
论文数:
0
引用数:
0
h-index:
0
WOODARD, D
;
DANDEKAR, N
论文数:
0
引用数:
0
h-index:
0
DANDEKAR, N
;
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
WOOD, CEC
;
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
SHUR, MS
;
BOARD, K
论文数:
0
引用数:
0
h-index:
0
BOARD, K
.
ELECTRONICS LETTERS,
1980,
16
(13)
:524
-525
[2]
EFFECT OF IONIZED IMPURITY SCATTERING ON ELECTRON TRANSIT-TIME IN GAAS AND INP FETS
[J].
HILL, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
HILL, G
;
ROBSON, PN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
ROBSON, PN
;
MAJERFELD, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
MAJERFELD, A
;
FAWCETT, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
FAWCETT, W
.
ELECTRONICS LETTERS,
1977,
13
(08)
:235
-236
[3]
IMPROVED THEORY OF BALLISTIC TRANSPORT IN ONE DIMENSION
[J].
HOLDEN, AJ
论文数:
0
引用数:
0
h-index:
0
HOLDEN, AJ
;
DEBNEY, BT
论文数:
0
引用数:
0
h-index:
0
DEBNEY, BT
.
ELECTRONICS LETTERS,
1982,
18
(13)
:558
-559
[4]
TRANSIENT VELOCITY CHARACTERISTICS OF ELECTRONS IN GAAS WITH GAMMA-L-X CONDUCTION-BAND ORDERING
[J].
KRATZER, S
论文数:
0
引用数:
0
h-index:
0
机构:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, United States
KRATZER, S
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, United States
FREY, J
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(07)
:4064
-4068
[5]
NEAR BALLISTIC TRANSPORT IN A NONPARABOLIC-BAND STRUCTURE FOR N-GAAS AND P-GAAS
[J].
LEE, J
论文数:
0
引用数:
0
h-index:
0
LEE, J
;
SU, CB
论文数:
0
引用数:
0
h-index:
0
SU, CB
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(05)
:933
-935
[6]
TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP
[J].
MALONEY, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
MALONEY, TJ
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
FREY, J
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(02)
:781
-787
[7]
ELECTRON DYNAMICS IN SHORT-CHANNEL INP FIELD-EFFECT TRANSISTORS
[J].
MALONEY, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14850
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14850
MALONEY, TJ
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14850
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14850
FREY, J
.
ELECTRONICS LETTERS,
1974,
10
(07)
:115
-116
[8]
FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING
[J].
MALONEY, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
MALONEY, TJ
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
FREY, J
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(05)
:519
-519
[9]
MALONEY TJ, 1976, IEEE T ELECTRON DEVI, V23, P357
[10]
QUESTIONABILITY OF DRIFT-DIFFUSION TRANSPORT IN ANALYSIS OF SMALL SEMICONDUCTOR-DEVICES
[J].
ROHR, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, ELECT ENGN DEPT, GAINESVILLE, FL 32601 USA
ROHR, P
;
LINDHOLM, FA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, ELECT ENGN DEPT, GAINESVILLE, FL 32601 USA
LINDHOLM, FA
;
ALLEN, KR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, ELECT ENGN DEPT, GAINESVILLE, FL 32601 USA
ALLEN, KR
.
SOLID-STATE ELECTRONICS,
1974,
17
(07)
:729
-734
←
1
2
→
共 17 条
[1]
BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE
[J].
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
EASTMAN, LF
;
STALL, R
论文数:
0
引用数:
0
h-index:
0
STALL, R
;
WOODARD, D
论文数:
0
引用数:
0
h-index:
0
WOODARD, D
;
DANDEKAR, N
论文数:
0
引用数:
0
h-index:
0
DANDEKAR, N
;
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
WOOD, CEC
;
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
SHUR, MS
;
BOARD, K
论文数:
0
引用数:
0
h-index:
0
BOARD, K
.
ELECTRONICS LETTERS,
1980,
16
(13)
:524
-525
[2]
EFFECT OF IONIZED IMPURITY SCATTERING ON ELECTRON TRANSIT-TIME IN GAAS AND INP FETS
[J].
HILL, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
HILL, G
;
ROBSON, PN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
ROBSON, PN
;
MAJERFELD, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
MAJERFELD, A
;
FAWCETT, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
FAWCETT, W
.
ELECTRONICS LETTERS,
1977,
13
(08)
:235
-236
[3]
IMPROVED THEORY OF BALLISTIC TRANSPORT IN ONE DIMENSION
[J].
HOLDEN, AJ
论文数:
0
引用数:
0
h-index:
0
HOLDEN, AJ
;
DEBNEY, BT
论文数:
0
引用数:
0
h-index:
0
DEBNEY, BT
.
ELECTRONICS LETTERS,
1982,
18
(13)
:558
-559
[4]
TRANSIENT VELOCITY CHARACTERISTICS OF ELECTRONS IN GAAS WITH GAMMA-L-X CONDUCTION-BAND ORDERING
[J].
KRATZER, S
论文数:
0
引用数:
0
h-index:
0
机构:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, United States
KRATZER, S
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, United States
FREY, J
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(07)
:4064
-4068
[5]
NEAR BALLISTIC TRANSPORT IN A NONPARABOLIC-BAND STRUCTURE FOR N-GAAS AND P-GAAS
[J].
LEE, J
论文数:
0
引用数:
0
h-index:
0
LEE, J
;
SU, CB
论文数:
0
引用数:
0
h-index:
0
SU, CB
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(05)
:933
-935
[6]
TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP
[J].
MALONEY, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
MALONEY, TJ
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
FREY, J
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(02)
:781
-787
[7]
ELECTRON DYNAMICS IN SHORT-CHANNEL INP FIELD-EFFECT TRANSISTORS
[J].
MALONEY, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14850
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14850
MALONEY, TJ
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14850
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14850
FREY, J
.
ELECTRONICS LETTERS,
1974,
10
(07)
:115
-116
[8]
FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING
[J].
MALONEY, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
MALONEY, TJ
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
FREY, J
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(05)
:519
-519
[9]
MALONEY TJ, 1976, IEEE T ELECTRON DEVI, V23, P357
[10]
QUESTIONABILITY OF DRIFT-DIFFUSION TRANSPORT IN ANALYSIS OF SMALL SEMICONDUCTOR-DEVICES
[J].
ROHR, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, ELECT ENGN DEPT, GAINESVILLE, FL 32601 USA
ROHR, P
;
LINDHOLM, FA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, ELECT ENGN DEPT, GAINESVILLE, FL 32601 USA
LINDHOLM, FA
;
ALLEN, KR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, ELECT ENGN DEPT, GAINESVILLE, FL 32601 USA
ALLEN, KR
.
SOLID-STATE ELECTRONICS,
1974,
17
(07)
:729
-734
←
1
2
→