NEAR BALLISTIC TRANSPORT IN A NONPARABOLIC-BAND STRUCTURE FOR N-GAAS AND P-GAAS

被引：7

作者：

LEE, J

SU, CB

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 05期

关键词：

D O I：

10.1109/T-ED.1982.20805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：933 / 935

页数：3

共 10 条

[1] ON THE NATURE OF BALLISTIC TRANSPORT IN SHORT-CHANNEL SEMICONDUCTOR-DEVICES [J].

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FERRY, DK ;

GRUBIN, HL .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :209-210

[2] BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE [J].

EASTMAN, LF ;

STALL, R ;

WOODARD, D ;

DANDEKAR, N ;

WOOD, CEC ;

SHUR, MS ;

BOARD, K .

ELECTRONICS LETTERS, 1980, 16 (13) :524-525

[3] THE PROBABILITY FOR BALLISTIC ELECTRON MOTION IN N-GAAS [J].

LEE, J .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :167-169

[4] BALLISTIC TRANSPORT IN A NONPARABOLIC BAND-STRUCTURE [J].

LEE, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4676-4680

[5] IMPORTANCE OF BOUNDARY-CONDITIONS TO CONDUCTION IN SHORT SAMPLES [J].

ROSENBERG, JJ ;

YOFFA, EJ ;

NATHAN, MI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :941-944

[6] GAAS N+-P--N+ BALLISTIC STRUCTURE [J].

SHUR, MS ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1980, 16 (13) :522-523

[7] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].

SHUR, MS ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683

[8] BALLISTIC ELECTRON-TRANSPORT IN A NONPARABOLIC BAND [J].

SOCHA, JB ;

REES, GJ .

ELECTRONICS LETTERS, 1980, 16 (23) :872-873

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[10]

Zuleeg R., 1980, IEEE Electron Device Letters, VEDL-1, P234, DOI 10.1109/EDL.1980.25300

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